An worldwide analysis workforce has designed a two-terminal perovskite-silicon tandem photo voltaic cell that makes use of new hybrid interconnecting layers to scale back recombination losses within the floor perovskite gadget. The tandem cell achieves a formidable fill issue of 81.8%, which the scientists say is the very best worth reported for this cell know-how up to now.
A gaggle of researchers led by Jinan University in China has developed a two-terminal (2T) perovskite-silicon tandem photo voltaic cell based mostly on particular hybrid interconnecting layers (ICLs) that stop direct contact between the perovskite absorber and clear conductive oxide. (TCO) .
“Typical self-assembled monolayers (SAMs) immediately on the transparent-conductive-oxide (TCO) recombination layer exhibit poor uniformity and complexity, thus leading to vital leakage present loss and poor tandem reproducibility photo voltaic cells,” the corresponding writer of the analysis, Yousheng Wang , mentioned pv journal. “To tackle this subject, we suggest a sputtered nickel oxide (NiOx) because the seed layer of SAMs to construct hybrid interconnected layers. The sputtered therapy approach offers straightforward coating of a posh substrate and excessive reproducibility.”
According to Wang, NiOx supplies can additional improve the bonding of SAM molecules to the substrate. Therefore, the hybrid ICLs can enhance the interface uniformity between TCO and the SAM based mostly on MeO-2PACz, which is also called [2-(3,6-Dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic acid, and cut back leakage present. “Then, a great vitality degree alignment between perovskite and hybrid ICLs is established, which is useful for service extraction and transport,” he added. “Hybrid ICLs considerably cut back interface defects and bulk defects.”
The scientists constructed a tandem cell with a backside silicon heterojunction gadget and a 19.73%-efficient high inverted perovskite photo voltaic cell with an vitality bandgap of 1.71 eV integrating ICLs. The latter is designed with a substrate made from indium tin oxide (ITO), a gap transport layer (HTL) made from nickel(II) oxide (NiOx), the MeO-2PACz SAM, a perovskite absorber doped with 2 -phenylethylammonium iodide ( PEAI), one electron transport layer (ETL) based mostly on a buckminsterfullerene (C60), a clear again contact made from indium zinc oxide (IZO), and a silver (Ag) steel contact.
The efficiency of the tandem gadget is analyzed and in comparison with a reference cell based mostly on NiOx HTL however with out the MeO-2PACz SAM. The latter achieved an influence conversion effectivity of twenty-two.27%, an open circuit voltage of 1.75 V, a short-circuit present density of 17.85 mA cm.-2and a fill issue of 71.15%. The former obtained an effectivity of 28.47%, an open circuit voltage of 1.88 V, a brief circuit present density of 18.25 mA cm-2and a fill issue of 81.8%.
The workforce emphasised that the fill issue of the tandem cell is at present one of many highest within the scientific literature for a perovskite-silicon gadget. “It was discovered that the hybrid ICLs of NiOx/MeO-2PACz considerably reduces present leakage and non-radiative recombination loss by avoiding direct contact between perovskites and TCO,” it additional defined. “Our outcomes present an efficient methodology to enhance uniformity and cut back present leakage of the MeO-2PACz coating on the substrate.”
The photo voltaic cell is offered within the paper “Hybrid interconnecting layers cut back present leakage loss in perovskite/silicon tandems with 81.8% fill issue,” revealed in Cell Reports Physical Science. The analysis workforce consists of lecturers from Forschungszentrum Jülich GmbH in Germany, in addition to from Wuyi University and the University of Macau in China.
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