The scientists simulated a number of cell constructions with out an electron transport layer and recognized the perfect design with a Zr:In2O3 entrance clear electrode, a CuSCN gap transport layer, and a NAN on the again clear electrode. They additionally optimized its thickness and bandgap.
Researchers from India have proposed a novel bifacial electron transport layer (ETL)-free cell construction for versatile gadgets. They optimized this cell utilizing SCAPS-1D simulation software program, selecting the simplest mixture of entrance clear electrode (FTE), gap transport layer (HTL), and rear clear electrode (RTE). The new construction achieves an influence conversion effectivity (PCE) that exceeds 27%.
“ETL-free perovskite photo voltaic cells (PSCs) are essentially the most promising and acceptable instruments for the event of versatile PSCs because of the low processing temperature, the best configuration, and the elimination of advanced preparation routes, which reduces power and time,” the researchers stated. “They could be simply processed by the roll-to-roll methodology, spray coating, inkjet printing, and could be encapsulated in a low-cost versatile layer.”
The scientists began with a reference construction consisting of an FTE layer of PFTO; interfacial defect layer (IDL)1; a perovskite layer (FA0.75MA0.25PbI2.5Br0.5); IDL2; HTL layer of Spiro-OMeTAD; IDL3; and an RTE layer of Cu/Cu2O (PFTO/IDL1/FA0.75MA0.25PbI2.5Br0.5/IDL2/Spiro-OMeTAD/IDL3/Cu/Cu2O). They put the perovskite layer thickness to 600 nm.
“When selecting an appropriate FTE, we noticed that the decrease worth of the conduction band offset (CBO) on the FTE/perovskite interface exhibits a greater efficiency of the gadget because of the potential-good-like construction,” defined the group. “CuI and CuSCN present higher band alignment within the perovskite absorber layer in comparison with different HTLs, leading to higher gadget efficiency. The electron affinity of RTE performs an necessary function in band alignment of the RTE / HTL interface and, due to this fact, the efficiency of the gadget.
After the champion cell was completed, the group checked its bandgap and thickness.
“The gadget PCE will increase as much as an optimized bandgap of 1.4 eV, reaching a PCE of 24.65% (entrance illumination) and 25.48% (again illumination). Beyond this bandgap, the PCE began to lower,” the outcomes confirmed. “After optimizing the thickness of the absorber layer (800 nm) with a defect density of 1.0 × 10^14 cm−3, the PCE elevated to 26.88% and 27.35%.”
They offered their ends in “Optimizing the efficiency of ETL-free bifacial perovskite photo voltaic cells for versatile gadgets: A simulation research,” which was not too long ago revealed in Next Energy. The staff consists of researchers from India’s National Institute of Technology and the Indian Institute of Technology.
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